DRIE (Deep Reactive Ion Etching)

The "SHARP" Process for submicron features. (Courtesy ESIEE)

The "SHARP" Process for submicron features. (Courtesy ESIEE)

Deep Reactive Ion Etching prevents lateral etching of the silicon resulting in highly anisotropic etch profiles at high etch rates and with high aspect ratio compared to wet chemical etching.

Current maximum etch rates are now exceeding 50 μm/min, with an excellent etch depth uniformity.

Better sensitivity of MEMS devices requires increasingly higher aspect ratio features. The Aspect Ratio of a given feature, like a trench, is defined as the ratio between the depth of the trench and the width.

DRIE Etching at Micralyne

Micralyne’s DRIE technology is established for full-scale manufacturing. With etching capabilities varying from under 1μm to over 700μm’s in depth, Micralyne’s expertise lies in its DRIE recipes. Standard DRIE recipes are incapable of releasing heat sensitive membrane structures. This is because of excessive heat buildup that results in a loss of sidewall passivation and ultimately destruction of the device. Micralyne has developed specific low heat generating recipes that have successfully been implemented into multiple designs and process flows.

Micralyne has also developed multiple ways of mounting DRIE etch samples onto full sized wafer carriers, allowing R&D work to be completed on wafer pieces. This results in reduced material cost and faster experimental results. Micralyne has successfully developed DRIE recipes for over 50 product designs. Many customers require very specific etch specifications such as sidewall angle, sidewall roughness, etch rate, uniformity, selectivity, max temperatures, etch stop, low polymer production and others.

Micralyne has extensive experience customizing DRIE recipes to meet these varying customer requirements.

If you want to find out more information about DRIE (Deep Reactive Ion Etching), please Contact Us.