Etch processes are fundamental to MEMS and microfabrication. Micralyne’s Development Team has broad experience in numerous selective-etch techniques in both dry and wet processes.

DRIE (Deep Reactive Ion Etch)

  • High aspect ratio (up to 50:1 aspect ratio, sidewall angle 89.5° to 89.8° and etch rate up to 16 µm/min, etch depths < 1µm to > 1000 µm)
  • Positive profile and isotropic etching
  • Proven processes for heat sensitive membrane or mirror release etch
  • Extensive experience with through-wafer etches
  • Vacuum tape bonding for through-wafer etches
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RIE – (Reactive Ion Etch)

  • Silicon, quartz, oxide, nitride, polysilicon, oxynitride, Ti, TiW, Nb
  • Wafer edge protection for KOH/TMAH mask etch layers
  • Deep trench oxide etch (for removal of oxide at bottom of silicon trenches, up to 10:1 aspect ratio)

Wet etching – metal/glass

  • Silicon isotropic etching (depth control of target ± ~3 µm)
  • Glass isotropic etching from 0.4 µm to 300 µm (depth control of ± 0.2 µm on a 16 µm etch, glass CD: 90 µm ± 3 µm )
  • HF oxide sacrificial etch
  • Lift-off
  • Thin film etching (metals and dielectrics)
  • Standard wet cleaning processes (acids, bases and solvents)
  • Advanced wet processes such as spin etcher, megasonic and recirculating baths
  • Critical point dryer
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Ready to discuss project needs? Call us on 1.780.431.4400 or email us at sales@micralyne.com