Etching

DRIE (Deep Reactive Ion Etch)

• High aspect ratio (up to 50:1 aspect ratio, sidewall angle 89.5° to 89.8° and etch rate up to 16 µm/min, etch depths < 1µm to > 1000 µm)
• Positive profile and isotropic etching
• Proven processes for heat sensitive membrane or mirror release etch
• Extensive experience with through-wafer etches
• Vacuum tape bonding for through-wafer etches

RIE – (Reactive Ion Etch)

• Silicon, quartz, oxide, nitride, polysilicon, oxynitride, Ti, TiW, Nb
• Wafer edge protection for KOH/TMAH mask etch layers
• Deep trench oxide etch (for removal of oxide at bottom of silicon trenches, up to 10:1 aspect ratio)

Wet etching – metal/glass

• Silicon isotropic etching (depth control of target ± ~3 µm)
• Glass isotropic etching from 0.4 µm to 300 µm (depth control of ± 0.2 µm on a 16 µm etch, glass CD: 90 µm ± 3 µm )
• HF oxide sacrificial etch
• Lift-off
• Thin film etching (metals and dielectrics)
• Standard wet cleaning processes (acids, bases and solvents)
• Advanced wet processes such as spin etcher, megasonic and recirculating baths
• Critical point dryer