Photo Lithography

Virtually all MEMS and microfabricated devices start with a pattern on the wafer to perform a variety of physical and chemical processes on the substrate. This patterning is used to selectively isolate certain areas of the die for deposition, etching, doping and other activities. The primary method used to create the pattern is photolithography. Micralyne uses both contact aligners and steppers to provide various photolithography capabilities.

Expose

ASML PAS 5500/60B I-line 5X reduction stepper

  • Submicron resolution: 0.45 µm
  • Single machine overlay: 90 nm (3 sigma)
  • 3” to 8” fully automatic tool
  • 55 wafers/hour throughput (6”)
  • UDOF > 1 µm @ 0.45 µm with NA=0.54
  • Minimum features: 0.5 µm with CD uniformity: 60 nm (3 sigma)

Contact Aligner 1:1

  • Minimum features: 1 µm (vacuum contact mode) & 3 µm (proximity mode)
  • Alignment accuracy: 1 µm (frontside align) & 3 µm (front to backside align)
  • CD uniformity: 0.1 µm (1 sigma)

Coat & Develop

YES HMDS vapor prime oven

Automated SVG 8600 coat & develop tracks

  • 4”/6”, transparent wafer compatible
  • Positive resists thickness 1-15 µm
  • Thickness uniformity control down to 1% for thin resist
  • Puddle/spray develop with developer chemical temperature control

Stand-alone Solitec coat & develop tools

  • Spun on lift-off layers, negative resists including SU-8, thick resists for electroplating
  • Square substrates, small substrates
  • Spray develop
  • Metal ion bearing or metal ion free developers

 

Ready to discuss project needs? Call us on 1.780.431.4400 or email us at sales@micralyne.com